Institute for Complex Systems - Sapienza - CNR

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ISC Sapienza Low dimensional systems

Low dimensional systems

Physics of low dimensional electronic systems

Publications

Graphene and carbon-based new materials

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The investigation of the electronic properties of graphene (single hexagonal layer of carbon atoms) has attracted a renewed interest after the development of recent techniques which permit to produce and manage single-layer (and also multilayer) samples of this materials. Nowadays truly atomic single-layer isolated samples are available as well as epitaxially grown graphene on substrates. A larFig. 1: electronic structure of graphene and Dirac-like dispersionge interest, for its potential technological applications, concerns the investigation of optical and transport properties of both single-layer and multi-layered graphene, which are dominated by its so-called relativistic Dirac-like electronic structure (Fig. 1).

Last Updated on Tuesday, 05 February 2013 18:36 Read more...

Polarons in organic single crystal FET's

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Organic field effect transistors (OFETs) are providing exciting prospects for potential applications in electronics. The active elements of these devices use “plastic” semiconductors, based on carbon and hydrogen. Among the advantages compared to classical silicon transistors, this new generation of components should combine mechanical flexibility, low weight, transparency and low cost. Enormous progress has been made to improve the performance of these devices through optimising the synthesis processes, drastically reducing the concentration of impurities present. At this point, a more fundamental understanding of the microscopic mechanisms governing electron transport in the organic materials becomes necessary. Systematic studies of transport properties in organic transistors based on rubrene have been done by A. F. Morpugno’s team at the Institute of Nanosciences of Delft Technical University (Netherlands).

Last Updated on Thursday, 03 March 2011 11:09 Read more...

Spintronic

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Spin-orbit interaction and spintronics

One of the new frontiers in condensed matter physics is development and engineering of electronic devices which carrier "bit" informations in the spin degree of freedom of the electronc instead of their charge. This research line is called indeed "spintronics". Within this context the spin-orbit interaction plays a key role, since it permits to tune the spin properties by means of charge related fields, as an electric field. A remarkable example of this idea is the spin-Hall effect, whose dependence on the degrees of impurity scattering, on finite size effects and on the geometry of the device is nowadays largely debated. In general, two dimensional systems, as well as quantum dots, quantum wells etc. are analyzed. Spin-orbit interaction is in addition relevant also in three-dimensional systems as the non-centrosymmetric materials CePt3Si, Li2(PdxPt1-x)3B, where also unconventiomal superconductivity appears.

Last Updated on Thursday, 03 March 2011 11:08 Read more...